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    SRAM

    大容量SRAM是高存儲(chǔ)密度的靜態(tài)數(shù)據(jù)存儲(chǔ)器,由一個(gè)或多個(gè)SRAM基片采用立體封裝工藝堆疊而成。廣泛應(yīng)用于航空航天領(lǐng)域嵌入式計(jì)算機(jī)系統(tǒng)。

     

      產(chǎn)品特性


    總?cè)萘浚?/span>4M~32M;

    訪問(wèn)速度:最快達(dá)15ns;

    數(shù)據(jù)寬度:8位,16位,32位,40位;

    電源電壓:3.3V5V;

    典型產(chǎn)品輻照指標(biāo):

    TID: 100 kradSi

    SEL: 99.8 Mev·cm2/mg

    SEU: 0.7 Mev·cm2/mg

    工作溫度:-55~125℃。

     

       產(chǎn)品列表



    #

    SRAM

    存儲(chǔ)容量(bit)

    存儲(chǔ)組織

    電壓

    訪問(wèn)速度

    抗輻射

    封裝

    溫度等級(jí)

    篩選等級(jí)

    質(zhì)量等級(jí)

    TID 1)

    SEL 2)

    SEU 3)

    1

    VDSR4M08xS44xx1C12

    4M

    512k*8

    5V

    15 ns

    100

    59

    0.2

    SOP44

    E,I,M

    E,B,M,S

    EE, IB, MM, MS

    2

    VDSR4M08xS44xx1V12

    4M

    512k*8

    3.3V

    15 ns

    100

    27

    0.2

    SOP44

    E,I,M

    E,B,M,S

    EE, IB, MM, MS

    3

    VDSR8M16xS54xx2C12

    8M

    512K*16

    5V

    15 ns

    >50

    >75

    >2

    SOP54

    E,I,M

    E,B,M,S

    EE, IB, MM, MS

    4

    VDSR8M16xS54xx2V12

    8M

    512K*16

    3.3V

    15 ns

    >100

    >75

    >0.9

    SOP54

    E,I,M

    E,B,M,S

    EE, IB, MM, MS

    5

    VDSR8M32xS64xx2V12

    8M

    256k*32

    3.3V

    15 ns

    100

    99.8

    0.7

    SOP64

    E,I,M

    E,B,M,S

    EE, IB, MM, MS

    6

    VDSR16M08XS44XX4C12

    16M

    2M*8

    5V

    15 ns

    100

    59

    0.2

    SOP44

    E,I,M

    E,B,M,S

    EE, IB, MM, MS

    7

    VDSR16M16xS54xx4C12

    16M

    1M*16

    5V

    15 ns

    >50

    >75

    >2

    SOP54

    E,I,M

    E,B,M,S

    EE, IB, MM, MS

    8

    VDSR16M16xS54xx4V12

    16M

    1M*16

    3.3V

    15 ns

    100

    >81.4

    <8.94

    SOP54

    E,I,M

    E,B,M,S

    EE, IB, MM, MS

    9

    VDSR16M32xS64xx4C12

    16M

    512k*32

    5V

    15 ns

    >50

    >75

    >2

    SOP64

    E,I,M

    E,B,M,S

    EE, IB, MM, MS

    10

    VDSR16M32xS64xx4V12

    16M

    512k*32

    3.3V

    15 ns

    100

    >76.5

    >1.7

    SOP64

    E,I,M

    E,B,M,S

    EE, IB, MM, MS

    11

    VDSR20M40xS84xx2V12

    20M

    512k*40

    3.3V

    15 ns

    >100

    >75

    >0.9

    SOP84

    E,I,M

    E,B,M,S

    EE, IB, MM, MS

    12

    VDSR20M40xS84xx6V12

    20M

    512k*40

    3.3V

    15 ns

    >100

    >75

    >0.9

    SOP84

    E,I,M

    E,B,M,S

    EE, IB, MM, MS

    13

    VDSR32M32xS68xx8V12

    32M

    1M*32

    3.3V

    15 ns

    >100

    >75

    >0.9

    SOP68

    E,I,M

    E,B,M,S

    EE, IB, MM, MS

    14

    VDSR32M32xS68xx8V12-

    32M

    1M*32

    3.3V

    15 ns

    >100

    >75

    >0.9

    SOP68

    E,I,M

    E,B,M,S

    EE, IB, MM, MS


         1)、TID: Total DoseKrads(Si)

    2)、SEL: LET ThresholdMev.cm2/mg

    3)SEU:SEU Threshold Mev.cm2/mg

      

       相關(guān)下載


    VDSR4M08xS44xx1C12 user manual.pdf

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